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| Si1304BDL New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES ID (A)a 0.90 0.75 PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.270 @ VGS = 4.5 V 0.385 @ VGS = 2.5 V Qg (Typ) 1.1 11 D TrenchFETr Power MOSFET D 100% Rg Tested RoHS COMPLIANT SC-70 (3-LEADS) D G 1 Marking Code KF XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1304BDL-T1-E3 S N-Channel MOSFET 3 D G S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 150_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source-Drain Diode Current Source Drain TC = 25_C TA = 25_C TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 "12 0.90 0.71 0.85b, c 0.68b, c 4 0.31 0.28b, c 0.37 0.24 0.34b, c 0.22b, c -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25_C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 sec d. Maximum under steady state conditions is 360 _C/W. Document Number: 73480 S-52057--Rev. B, 03-Oct-05 www.vishay.com t p 5 sec Steady State Symbol RthJA RthJF Typical 315 285 Maximum 375 340 Unit _C/W 1 Si1304BDL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.9 VGS =2.5 V, ID = 0.75 VDS = 15 V, ID = 0.9 4 0.216 0.308 2 0.270 0.385 S 0.6 30 27.3 3 1.3 "100 1 5 mV/_C V nA mA A A W V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 22 W ID ^ 0.68 A, VGEN = 4.5 V, Rg = 1 W f = 1 MHz VDS = 15 V, VGS = 4.5 V, ID = 0.9 VDS = 15 V, VGS = 0 V, f = 1 MHz 100 30 20 1.8 1.1 VDS = 15 V, VGS = 2.5 V, ID= 0.9 0.4 0.6 1.5 10 30 5 10 2.3 15 45 25 15 ns W 2.7 1.7 nC p pF Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Notes a. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. Guaranteed by design, not subject to production testing. Currenta IS ISM VSD trr Qrr ta tb IF = 0 28 A di/dt = 100 A/ms, TJ = 25_C 0.28 A, A/ms IS = 0.28 A 0.8 50 105 34 16 ns TC = 25_C 0.31 4 1.2 75 160 A V ns nC Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73480 S-52057--Rev. B, 03-Oct-05 Si1304BDL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 4 VGS = 3 thru 5 V 3 I D - Drain Current (A) VGS = 2.5 V 2 I D - Drain Current (A) 1.5 2.0 Vishay Siliconix Transfer Characteristics curves vs. Temp 1.0 TA = -55_C 0.5 TA = 25_C TA = 125_C VGS = 2.0 V 1 VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 180.0 Capacitance r DS(on) - On-Resistance ( W ) 0.5 VGS = 2.5 V 0.4 C - Capacitance (pF) 150.0 120.0 Ciss 90.0 0.3 VGS = 4.5 V 0.2 60.0 Coss 30.0 Crss 5.0 10.0 15.0 20.0 25.0 30.0 0.1 0 1 2 3 4 5 0.0 0.0 ID - Drain Current (A) VDS - Drain-Source Voltage (V) 5 ID = 0.91 A V GS - Gate-to-Source Voltage (V) 4 Qg-Gate Charge On-Resistance vs. Junction Temperature 2.0 ID = 0.90 A 1.7 rDS(on) - On-Resistance (Normalized) VDS = 15 V 3 VDS = 24 V 2 VGS = 4.5 V, ID = 0.9 A 1.4 1.1 VGS = 2.5 V, ID = 0.75 A 0.8 1 0 0.0 0.5 1.0 1.5 2.0 0.5 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 73480 S-52057--Rev. B, 03-Oct-05 www.vishay.com 3 Si1304BDL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Forward Diode Voltage vs. Temp 10.0 0.800 rDS(on) vs VGS vs Temperature ID = 0.9 A r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.600 TA = 125_C 0.400 TJ = 150_C 1.0 TJ = 25_C 0.1 0.200 TA = 25_C 0.0 0.3 0.6 0.9 1.2 0.000 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 1.4 1.3 16 1.2 V GS(th) Variance (V) ID = 250 mA Power (W) 1.1 1.0 0.9 0.8 0.7 0.6 -50 0 10-3 12 20 Single Pulse Power, Junction-to-Ambient TA = 25_C 8 4 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) Safe Operating Area 10 *Limited by rDS(on) 1 ms I D - Drain Current (A) 1 10 ms 100 ms 0.1 1s 10 s 0.01 TA = 25_C Single Pulse BVDSS Limited 0.001 0.1 1 1000 100 10 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified dc www.vishay.com 4 Document Number: 73480 S-52057--Rev. B, 03-Oct-05 Si1304BDL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating* 1.2 0.4 Vishay Siliconix Power, De-Rating 1.0 Power Dissipation (W) 0.3 ID - Drain Current (A) 0.8 0.6 0.2 0.4 0.1 0.2 0.0 0 25 50 75 100 125 150 0.0 25 50 75 100 125 150 TC - Case Temperature (_C) Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73480 S-52057--Rev. B, 03-Oct-05 www.vishay.com 5 Si1304BDL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 360_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73480. www.vishay.com Document Number: 73480 S-52057--Rev. B, 03-Oct-05 6 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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